Vishay SISS23DN-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS23DN-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SISS23DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISS23DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
50 A
Rds on Drain Source Resistance
3.5 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (SISS23DN-T1-GE3 vs SISS10DN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | SIS | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 50 ns | 7 ns | -- | -- |
| ID Continuous Drain Current | 50 A | 60 A | -- | -- |
| Pd Power Dissipation | 57 W | 57 W | -- | -- |
| Qg Gate Charge | 300 nC | 75 nC | -- | -- |
| Rds on Drain Source Resistance | 3.5 mOhms | 2.65 mOhms | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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