Vishay SISS63DN-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS63DN-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK 1212-8S
Lifecycle Status
Active
Datasheet
SISS63DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISS63DN-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
127.5 A
Rds on Drain Source Resistance
2.7 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Threshold Voltage
1.5 V
Alternate Parts Comparison (SISS63DN-T1-GE3 vs SISS10DN-T1-GE3 vs SISS04DN-T1-GE3 vs SISS02DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 25 ns, 70 ns | 7 ns | 10 ns | 10 ns |
| ID Continuous Drain Current | 127.5 A | 60 A | 80 A | 80 A |
| Package | PowerPAK 1212-8S | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Pd Power Dissipation | 65.8 W | 57 W | 65.7 W | 65.7 W |
| Qg Gate Charge | 72.2 nC, 157.2 nC | 75 nC | 93 nC | 83 nC |
| Rds on Drain Source Resistance | 2.7 mOhms | 2.65 mOhms | 1.2 mOhms | 1.2 mOhms |
| Rise Time | 28 ns, 60 ns | 19 ns | 21 ns | 23 ns |
| Action |
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