Vishay SISS42LDN-T1-GE3 MOSFETs
Trans MOSFET N-CH 100V 11.3A 8-Pin PowerPAK 1212 EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS42LDN-T1-GE3
Detailed Description
Trans MOSFET N-CH 100V 11.3A 8-Pin PowerPAK 1212 EP T/R
Package
PowerPAK-1212-8S
Lifecycle Status
Active
Datasheet
SISS42LDN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISS42LDN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
39 A
Rds on Drain Source Resistance
14.9 mOhms
Alternate Parts Comparison (SISS42LDN-T1-GE3 vs SISS46DN-T1-GE3 vs SISS76LDN-T1-GE3 vs SISS63DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8S | PowerPAK-1212-8S | PowerPAK-1212-8S | PowerPAK 1212-8S |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| Fall Time | 5 ns | -- | -- | 25 ns, 70 ns |
| Forward Transconductance Min | 70 S | -- | -- | 75 S |
| ID Continuous Drain Current | 39 A | -- | -- | 127.5 A |
| Pd Power Dissipation | 57 W | -- | -- | 65.8 W |
| Qg Gate Charge | 48 nC | -- | -- | 72.2 nC, 157.2 nC |
| Rds on Drain Source Resistance | 14.9 mOhms | -- | -- | 2.7 mOhms |
| Action |
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