Vishay SISH615ADN-T1-GE3 MOSFETs
N-Channel MOSFET, 30V, 10A, 15mΩ
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISH615ADN-T1-GE3
Detailed Description
N-Channel MOSFET, 30V, 10A, 15mΩ
Package
PowerPAK-1212-8S
Lifecycle Status
Active
Datasheet
SISH615ADN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISH615ADN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
4.4 mOhms
Alternate Parts Comparison (SISH615ADN-T1-GE3 vs SISH625DN-T1-GE3 vs SISH101DN-T1-GE3 vs SISH114ADN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Quad Drain Triple Source | Single Quad Drain Triple Source | Single |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Series | SIS | TrenchFET® | SISH | -- |
| Fall Time | 26 ns | -- | 8 ns | 7 ns |
| Forward Transconductance Min | 82 S | -- | 44 S | 50 S |
| ID Continuous Drain Current | 35 A | -- | 35 A | 35 A |
| Pd Power Dissipation | 52 W | -- | 52 W | 39 W |
| Action |
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