Vishay SISH114ADN-T1-GE3 MOSFETs
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212-SH EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISH114ADN-T1-GE3
Detailed Description
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212-SH EP T/R
Package
PowerPAK-1212-8SH-8
Lifecycle Status
Active
Datasheet
SISH114ADN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISH114ADN-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
7.5 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SISH114ADN-T1-GE3 vs SISH625DN-T1-GE3 vs SISH101DN-T1-GE3 vs SISH402DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Quad Drain Triple Source | Single Quad Drain Triple Source | Single |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Fall Time | 7 ns | -- | 8 ns | 15 ns |
| Forward Transconductance Min | 50 S | -- | 44 S | 82 S |
| ID Continuous Drain Current | 35 A | -- | 35 A | 35 A |
| Pd Power Dissipation | 39 W | -- | 52 W | 52 W |
| Qg Gate Charge | 32 nC | -- | 102 nC | 42 nC |
| Action |
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