Vishay SISH101DN-T1-GE3 MOSFETs
Trans MOSFET P-CH 30V 16.9A 8-Pin PowerPAK 1212-SH EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISH101DN-T1-GE3
Detailed Description
Trans MOSFET P-CH 30V 16.9A 8-Pin PowerPAK 1212-SH EP T/R
Package
PowerPAK 1212-SH EP
Lifecycle Status
Active
Datasheet
SISH101DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISH101DN-T1-GE3 MOSFETs technical specifications.
General
Series
SISH
RoHS
Compliant
Number of Pins
8
Number of Channels
1 Channel
Package / Case
Tape and Reel
Packaging
Tape and Reel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Alternate Parts Comparison (SISH101DN-T1-GE3 vs SISH114ADN-T1-GE3 vs SISH402DN-T1-GE3 vs SISH617DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Compliant | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single Quad Drain Triple Source | Single | Single | Single |
| Fall Time | 8 ns | 7 ns | 15 ns | 9 ns |
| Forward Transconductance Min | 44 S | 50 S | 82 S | 35 S |
| ID Continuous Drain Current | 35 A | 35 A | 35 A | 35 A |
| Pd Power Dissipation | 52 W | 39 W | 52 W | 52 W |
| Qg Gate Charge | 102 nC | 32 nC | 42 nC | 59 nC |
| Rds on Drain Source Resistance | 7.2 mOhms | 7.5 mOhms | 6 mOhms | 12.3 mOhms |
| Action |
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