Vishay SIHG20N50C MOSFETs
MOSFET N-CH 500V 20A TO247
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG20N50C
Base Model
Detailed Description
MOSFET N-CH 500V 20A TO247
Lifecycle Status
Active
Datasheet
SIHG20N50C Datasheet
Quick Jump:
Technical Specifications
Vishay SIHG20N50C MOSFETs technical specifications.
General
Package / Case
Bulk
Packaging
Bulk
Mounting Type
Through Hole
Lifecycle Status
Active
Continuous Drain Current at 25 C
20A (Tc)
Dimension
TO-247-3
Drain Source Breakdown Voltage
500 V
Drive Voltage Max Rds on Min Rds on
10 V
Gate Source Threshold Voltage
5V @ 250μA
Max Gate Charge
76nC @ 10V
Alternate Parts Comparison (SIHG20N50C vs SIHG20N50C-E3 vs SIHG120N60E-GE3 vs SIHG100N60E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technology | MOSFET | Si | Si | Si |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 44 ns | 33 ns | 20 ns |
| Forward Transconductance Min | -- | 6.4 S | 6 S | 11 S |
| ID Continuous Drain Current | -- | 20 A | 25 A | 30 A |
| Package | -- | TO-247-3 | TO-247-3 | TO-247-3 |
| Pd Power Dissipation | -- | 250 mW | 179 W | 208 W |
| Qg Gate Charge | -- | 65 nC | 45 nC | 50 nC |
| Rds on Drain Source Resistance | -- | 270 mOhms | 120 mOhms | 100 mOhms |
| Action |
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