Vishay SIHG120N60E-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG120N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SIHG120N60E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHG120N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
25 A
Rds on Drain Source Resistance
120 mOhms
Alternate Parts Comparison (SIHG120N60E-GE3 vs SIHG20N50C-E3 vs IRFP150NPBF vs IRFP9140NPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 33 ns | 44 ns | -- | -- |
| Forward Transconductance Min | 6 S | 6.4 S | -- | -- |
| ID Continuous Drain Current | 25 A | 20 A | -- | -- |
| Pd Power Dissipation | 179 W | 250 mW | -- | -- |
| Qg Gate Charge | 45 nC | 65 nC | -- | -- |
| Rds on Drain Source Resistance | 120 mOhms | 270 mOhms | -- | -- |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.