Vishay SIHG20N50C-E3 MOSFETs
500V 20A N-CH MOSFET TO-247AC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG20N50C-E3
Base Model
Detailed Description
500V 20A N-CH MOSFET TO-247AC
Package
TO-247-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SIHG20N50C-E3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
20 A
Rds on Drain Source Resistance
270 mOhms
Vgs Gate Source Voltage
- 30 V, + 30 V
Threshold Voltage
3 V
Alternate Parts Comparison (SIHG20N50C-E3 vs SIHG20N50C vs SIHG120N60E-GE3 vs IRFP150NPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | -- |
| RoHS | Yes | -- | Yes | Yes |
| Package | TO-247-3 | -- | TO-247-3 | TO-247-3 |
| Technology | Si | MOSFET | Si | -- |
| Number of Channels | 1 Channel | -- | 1 Channel | -- |
| Channel Mode | Enhancement | -- | Enhancement | -- |
| Configuration | Single | -- | Single | -- |
| Fall Time | 44 ns | -- | 33 ns | -- |
| Forward Transconductance Min | 6.4 S | -- | 6 S | -- |
| ID Continuous Drain Current | 20 A | -- | 25 A | -- |
| Pd Power Dissipation | 250 mW | -- | 179 W | -- |
| Qg Gate Charge | 65 nC | -- | 45 nC | -- |
| Action |
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