Vishay SIHG100N60E-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG100N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SIHG100N60E-GE3 Datasheet
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Technical Specifications
Vishay SIHG100N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
30 A
Rds on Drain Source Resistance
100 mOhms
Alternate Parts Comparison (SIHG100N60E-GE3 vs SIHG20N50C-E3 vs SIHG120N60E-GE3 vs IRFP150NPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 20 ns | 44 ns | 33 ns | -- |
| Forward Transconductance Min | 11 S | 6.4 S | 6 S | -- |
| ID Continuous Drain Current | 30 A | 20 A | 25 A | -- |
| Pd Power Dissipation | 208 W | 250 mW | 179 W | -- |
| Qg Gate Charge | 50 nC | 65 nC | 45 nC | -- |
| Rds on Drain Source Resistance | 100 mOhms | 270 mOhms | 120 mOhms | -- |
| Action |
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