Vishay SIHB065N60E-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHB065N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
D²PAK (TO-263)
Lifecycle Status
Active
Datasheet
SIHB065N60E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHB065N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Pins
2
Package / Case
Tube
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
40A (Tc)
Drain to Source Voltage Vdss
600 V
Drive Voltage Max Rds on Min Rds on
10 V
Alternate Parts Comparison (SIHB065N60E-GE3 vs SIHB16N50C-E3 vs SIHB120N60E-GE3 vs SIHB22N60E-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| RoHS | Yes | Yes | Yes | Yes |
| Technology | MOSFET (Metal Oxide) | Si | Si | Si |
| Series | E | -- | E | E |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 31 ns | 33 ns | 35 ns |
| ID Continuous Drain Current | -- | 16 A | 25 A | 21 A |
| Package | -- | TO-263-3 | TO-263-3 | D2PAK-3 (TO-263-3) |
| Pd Power Dissipation | -- | 38 W | 179 W | 227 W |
| Action |
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