Vishay SIHB22N60E-E3 MOSFETs
TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3, FET General Purpose Power
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHB22N60E-E3
Base Model
Detailed Description
TRANSISTOR 21 A, 600 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3, FET General Purpose Power
Package
D2PAK-3 (TO-263-3)
Lifecycle Status
Active
Datasheet
SIHB22N60E-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHB22N60E-E3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
650 V
ID Continuous Drain Current
21 A
Rds on Drain Source Resistance
180 mOhms
Alternate Parts Comparison (SIHB22N60E-E3 vs SIHB22N60ET1-GE3 vs IRFBC30STRLPBF vs IRFZ24SPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | E | E | IRFBC | IRLZ |
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | - 55°C ~ + 175°C |
| RoHS | Yes | Unconfirmed | Yes | Yes |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 21 A | -- | 3.6 A | 17 A |
| Package | D2PAK-3 (TO-263-3) | -- | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) |
| Pd Power Dissipation | 227 W | -- | 3.1 W | 60 W |
| Qg Gate Charge | 57 nC | -- | 31 nC | 25 nC |
| Action |
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