Vishay SQM40031EL_GE3 MOSFETs
Power Field-Effect Transistor, 120A I(D), 40V, 0.003ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQM40031EL_GE3
Detailed Description
Power Field-Effect Transistor, 120A I(D), 40V, 0.003ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
Package
D²PAK (TO-263)
Lifecycle Status
Active
Datasheet
SQM40031EL_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQM40031EL_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
2
Number of Channels
1
Package / Case
D²PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
120 A
Current Continuous Drain ID 25 C
120A (Tc)
Alternate Parts Comparison (SQM40031EL_GE3 vs SQM120P10_10M1LGE3 vs SQM120P06-07L_GE3 vs SQM85N15-19_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | SQ | SQ | TrenchFET® |
| Mounting Type | Surface Mount | SMD/SMT | Surface Mount | Surface Mount |
| Number of Channels | 1 | 1 Channel | 1 Channel | 1 |
| RoHS | Yes | True | Compliant with Exemption | Yes |
| Channel Mode | -- | Enhancement | Enhancement | -- |
| Configuration | -- | Single | Single | -- |
| Fall Time | -- | 200 ns | 32 ns | 170 ns |
| Forward Transconductance Min | -- | 60 S | 90 S | -- |
| ID Continuous Drain Current | -- | 120 A | -- | -- |
| Maximum Operating Temperature C | -- | + 175 | 175 | -- |
| Minimum Operating Temperature C | -- | - 55 | -55 | -- |
| Package | -- | TO-263-3 | -- | -- |
| Action |
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