Vishay SIHB120N60E-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHB120N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-263-3
Lifecycle Status
Active
Datasheet
SIHB120N60E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHB120N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
25 A
Rds on Drain Source Resistance
120 mOhms
Alternate Parts Comparison (SIHB120N60E-GE3 vs SIHB33N60EF-GE3 vs SIHB16N50C-E3 vs SIHB33N60ET1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 25 A | 33 A | 16 A | 33 A |
| Package | TO-263-3 | TO-263-3 | TO-263-3 | TO-263-3 |
| Pd Power Dissipation | 179 W | 278 W | 38 W | 278 W |
| Qg Gate Charge | 45 nC | 103 nC | 45 nC | 103 nC |
| Rds on Drain Source Resistance | 120 mOhms | 98 mOhms | 380 mOhms | 98 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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