Vishay SQM60030E_GE3 MOSFETs
Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQM60030E_GE3
Detailed Description
Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Package
D²PAK (TO-263)
Lifecycle Status
Active
Datasheet
SQM60030E_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQM60030E_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
2
Package / Case
D²PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
120A (Tc)
Drain to Source Voltage Vdss
80 V
Drive Voltage Max Rds on Min Rds on
10 V
Alternate Parts Comparison (SQM60030E_GE3 vs SQM200N04-1M7L_GE3 vs SQM110P06-8M9L_GE3 vs SQM100N10-10_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | D²PAK | TO-263-7, D2PAK | Tape and Reel | Reel - TR |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | SMD (SMT) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Pins | 2 | 7 | 3 | 3 |
| RoHS | Yes | ROHS3 Compliant | Compliant with Exemption | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 120A (Tc) | 200A (Tc) | 110A (Tc) | 100A (Tc) |
| Drain to Source Voltage Vdss | 80 V | 40 V | 60 V | 100 V |
| Drive Voltage Max Rds on Min Rds on | 10 V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | N-Channel | N-Channel | P-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 165 nC @ 10 V | 291 nC @ 10 V | 200 nC @ 10 V | 185 nC @ 10 V |
| Action |
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