Toshiba 2SC5096-R,LF RF BJT
2SC5096-R,LF by Toshiba · RF BJT · SOT-416
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5096-R,LF
Package
SOT-416
Lifecycle Status
Obsolete
Datasheet
2SC5096-R,LF Datasheet
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Technical Specifications
Toshiba 2SC5096-R,LF RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
10V
Frequency Transition
10GHz
Noise Figure Db Typ F
1.4dB @ 1GHz
Gain
1.4dB
Power Max
100mW
Alternate Parts Comparison (2SC5096-R,LF vs 2SC5065-O(TE85L,F) vs 2SC4215-O(TE85L,F) vs 2SC5087R(TE85L,F))
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | 125°C (TJ) | - 55°C ~ + 125°C | + 125°C | - 55°C ~ + 125°C |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-416 | SC-70-3 | SC-70, SOT-323 | SMQ-4 |
| Collector Base Voltage Vcbo | -- | 20 V | 40 V | 20 V |
| Collector Emitter Voltage Vceo Max | -- | 12 V | 30 V | 12 V |
| Configuration | -- | Single | Single | Single |
| Emitter Base Voltage Vebo | -- | 3 V | 4 V | 3 V |
| Pd Power Dissipation | -- | 100 mW | 100 mW | 150 mW |
| Technology | -- | Si | Si | Si |
| Transistor Polarity | -- | NPN | NPN | NPN |
| Action |
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