Toshiba 2SC5085-O(TE85L,F) RF BJT
2SC5085-O(TE85L,F) by Toshiba · RF BJT · SC-70, SOT-323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5085-O(TE85L,F)
Package
SC-70, SOT-323
Lifecycle Status
Obsolete
Datasheet
2SC5085-O(TE85L,F) Datasheet
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Technical Specifications
Toshiba 2SC5085-O(TE85L,F) RF BJT technical specifications.
General
RoHS
RoHS Compliant
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Lifecycle Status
Obsolete
Collector Base Voltage Vcbo
20 V
Collector Emitter Voltage Vceo Max
12 V
Configuration
Single
Continuous Collector Current
80 mA
Current Collector IC Max
80 mA
Alternate Parts Comparison (2SC5085-O(TE85L,F) vs 2SC5087R(TE85L,F) vs MT3S113(TE85L,F) vs 2SC5065-O(TE85L,F))
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | 125°C (TJ) | - 55°C ~ + 125°C | + 150°C | - 55°C ~ + 125°C |
| RoHS | RoHS Compliant | Yes | Yes | Yes |
| Collector Emitter Voltage Vceo Max | 12 V | 12 V | 5.3 V | 12 V |
| Configuration | Single | Single | Single | Single |
| Continuous Collector Current | 80 mA | 80 mA | 100 mA | 30 mA |
| Dc Collector Base Gain Hfe Min | 80 | 120 | 200 | 80 |
| Emitter Base Voltage Vebo | 3 V | 3 V | 600 mV | 3 V |
| Pd Power Dissipation | 100 mW | 150 mW | 800 mW | 100 mW |
| Technology | Si | Si | SiGe | Si |
| Transistor Polarity | NPN | NPN | NPN | NPN |
| Collector Base Voltage Vcbo | 20 V | 20 V | -- | 20 V |
| Action |
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