Toshiba 2SC5086-O,LF RF BJT
2SC5086-O,LF by Toshiba · RF BJT · SC-75-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5086-O,LF
Package
SC-75-3
Lifecycle Status
Active
Datasheet
2SC5086-O,LF Datasheet
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Technical Specifications
Toshiba 2SC5086-O,LF RF BJT technical specifications.
General
Series
2SC5086
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 125°C
Technology
Si
Transistor Polarity
NPN
Dc Collector Base Gain Hfe Min
80
Collector Emitter Voltage Vceo Max
12 V
Emitter Base Voltage Vebo
3 V
Configuration
Single
Related Parts Comparison (2SC5086-O,LF vs MT3S113(TE85L,F) vs 2SC4215-O(TE85L,F) vs 2SC5087R(TE85L,F))
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 125°C | + 150°C | + 125°C | - 55°C ~ + 125°C |
| RoHS | Yes | Yes | Yes | Yes |
| Collector Emitter Voltage Vceo Max | 12 V | 5.3 V | 30 V | 12 V |
| Configuration | Single | Single | Single | Single |
| Emitter Base Voltage Vebo | 3 V | 600 mV | 4 V | 3 V |
| Package | SC-75-3 | S-Mini | SC-70, SOT-323 | SMQ-4 |
| Pd Power Dissipation | 100 mW | 800 mW | 100 mW | 150 mW |
| Technology | Si | SiGe | Si | Si |
| Transistor Polarity | NPN | NPN | NPN | NPN |
| Series | 2SC5086 | MT3S113 | -- | 2SC5087 |
| Collector Base Voltage Vcbo | 20 V | -- | 40 V | 20 V |
| Action |
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