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Toshiba 2SC4915-Y,LF RF BJT

2SC4915-Y,LF by Toshiba · RF BJT · SC-75, SOT-416

In Stock ActiveToshibaSC-75, SOT-416
2SC4915-Y,LF SC-75, SOT-416 package illustration

Same model may have multiple batches, images only for reference.

2SC4915-Y,LF
Manufacturer
Part Number (MPN)
2SC4915-Y,LF
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
PDF 2SC4915-Y,LF Datasheet
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Technical Specifications

Toshiba 2SC4915-Y,LF RF BJT technical specifications.

General

RoHS
RoHS Compliant
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
20 mA
Dc Current Gain Hfe Min IC Vce
100 @ 1mA, 6V
Frequency Transition
550 MHz
Gain
17dB ~ 23dB
Moisture Sensitivity Level MSL
1 (Unlimited)

Related Parts Comparison (2SC4915-Y,LF vs 2SC5065-O(TE85L,F) vs 2SC4215-O(TE85L,F) vs MT3S113(TE85L,F))

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD/SMTSMD/SMTSMD/SMT
Operating Temperature125°C (TJ)- 55°C ~ + 125°C+ 125°C+ 150°C
RoHSRoHS CompliantYesYesYes
Collector Emitter Voltage Vceo Max--12 V30 V5.3 V
Configuration--SingleSingleSingle
Emitter Base Voltage Vebo--3 V4 V600 mV
Maximum Dc Collector Current--30 mA20 mA100 mA
Package--SC-70-3SC-70, SOT-323S-Mini
Pd Power Dissipation--100 mW100 mW800 mW
Technology--SiSiSiGe
Transistor Polarity--NPNNPNNPN
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