STMicroelectronics SCTH90N65G2V-7 MOSFETs
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTH90N65G2V-7
Detailed Description
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Package
H2PAK-7
Lifecycle Status
Obsolete
Datasheet
SCTH90N65G2V-7 Datasheet
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Technical Specifications
STMicroelectronics SCTH90N65G2V-7 MOSFETs technical specifications.
General
Package / Case
TO-263-8, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
5V @ 1mA
Gate Charge Qg Max Vgs
157 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3300 pF @ 400 V
Fet Type
N-Channel
Power Dissipation Max
330W (Tc)
Alternate Parts Comparison (SCTH90N65G2V-7 vs SCTH100N65G2-7AG vs STW62N65M5 vs STH270N4F3-6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-8, D2PAK | TO-263-8, D2PAK | TO-247-3 | TO-263-7, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Active | Obsolete |
| Current Continuous Drain ID 25 C | 90A (Tc) | 95A (Tc) | 46A (Tc) | 180A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 650 V | 650 V | 650 V | 40 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 18V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 157 nC @ 18 V | 162 nC @ 18 V | 142 nC @ 10 V | 150 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 3300 pF @ 400 V | 3315 pF @ 520 V | 6420 pF @ 100 V | 7400 pF @ 25 V |
| Action |
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