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STMicroelectronics SCTH90N65G2V-7 MOSFETs

Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package

3STMicroelectronicsH2PAK-7$69.41
SCTH90N65G2V-7 - No Image Available

Same model may have multiple batches, images only for reference.

SCTH90N65G2V-7
Manufacturer
Part Number (MPN)
SCTH90N65G2V-7
Detailed Description
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Package
H2PAK-7
Lifecycle Status
Obsolete
Datasheet
PDF SCTH90N65G2V-7 Datasheet
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Technical Specifications

STMicroelectronics SCTH90N65G2V-7 MOSFETs technical specifications.

General

Package / Case
TO-263-8, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Description
SICFET N-CH 650V 90A H2PAK-7
Detailed Description
N-Channel 650 V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
Vgs Th Max ID
5V @ 1mA
Gate Charge Qg Max Vgs
157 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3300 pF @ 400 V

Alternate Parts Comparison (SCTH90N65G2V-7 vs SCTH100N65G2-7AG vs STW62N65M5 vs STH270N4F3-6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-8, D2PAKTO-263-8, D2PAKTO-247-3TO-263-7, D2PAK
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteObsoleteActiveObsolete
Current Continuous Drain ID 25 C90A (Tc)95A (Tc)46A (Tc)180A (Tc)
DescriptionSICFET N-CH 650V 90A H2PAK-7SICFET N-CH 650V 95A H2PAK-7MOSFET N-CH 650V 46A TO247MOSFET N-CH 40V 180A H2PAK
Detailed DescriptionN-Channel 650 V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7N-Channel 650 V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7N-Channel 650 V 46A (Tc) 330W (Tc) Through Hole TO-247-3N-Channel 40 V 180A (Tc) 300W (Tc) Surface Mount H2PAK
Drain to Source Voltage Vdss650 V650 V650 V40 V
Drive Voltage Max Rds on Min Rds on18V18V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs157 nC @ 18 V162 nC @ 18 V142 nC @ 10 V150 nC @ 10 V
Input Capacitance Ciss Max Vds3300 pF @ 400 V3315 pF @ 520 V6420 pF @ 100 V7400 pF @ 25 V
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