STMicroelectronics SCTH100N65G2-7AG MOSFETs
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTH100N65G2-7AG
Detailed Description
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
Package
H2PAK-7
Lifecycle Status
Obsolete
Datasheet
SCTH100N65G2-7AG Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCTH100N65G2-7AG MOSFETs technical specifications.
General
Package / Case
TO-263-8, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Description
SICFET N-CH 650V 95A H2PAK-7
Detailed Description
N-Channel 650 V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7
Gate Charge Qg Max Vgs
162 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3315 pF @ 520 V
Power Dissipation Max
360W (Tc)
Alternate Parts Comparison (SCTH100N65G2-7AG vs SCTH90N65G2V-7 vs STD80N6F7 vs STD9N80K5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-8, D2PAK | TO-263-8, D2PAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Active | Active |
| Current Continuous Drain ID 25 C | 95A (Tc) | 90A (Tc) | 40A (Tc) | 7A (Tc) |
| Description | SICFET N-CH 650V 95A H2PAK-7 | SICFET N-CH 650V 90A H2PAK-7 | MOSFET N-CH 60V 40A DPAK | MOSFET N-CHANNEL 800V 7A DPAK |
| Detailed Description | N-Channel 650 V 95A (Tc) 360W (Tc) Surface Mount H2PAK-7 | N-Channel 650 V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7 | N-Channel 60 V 40A (Tc) 100W (Tc) Surface Mount TO-252 (DPAK) | N-Channel 800 V 7A (Tc) 110W (Tc) Surface Mount DPAK |
| Drain to Source Voltage Vdss | 650 V | 650 V | 60 V | 800 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 18V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 162 nC @ 18 V | 157 nC @ 18 V | 25 nC @ 10 V | 12 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 3315 pF @ 520 V | 3300 pF @ 400 V | 1600 pF @ 30 V | 340 pF @ 100 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCTH90N65G2V-7STMicroelectronicsSilicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
STD80N6F7STMicroelectronicsN-channel 60 V, 6.8 mOhm typ., 40 A STripFET F7 Power MOSFET in a DPAK package
STD9N80K5STMicroelectronicsN-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSFET in a DPAK package