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STMicroelectronics BD434 BJTs

PNP BJT Transistor, 22V, 4A, 3MHz, SOT-32

489STMicroelectronicsTO-225AA, TO-126-3$0.83
BD434 TO-225AA, TO-126-3 package illustration

Same model may have multiple batches, images only for reference.

BD434
Manufacturer
Part Number (MPN)
BD434
Detailed Description
PNP BJT Transistor, 22V, 4A, 3MHz, SOT-32
Package
TO-225AA, TO-126-3
Lifecycle Status
Obsolete
Datasheet
PDF BD434 Datasheet
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Technical Specifications

STMicroelectronics BD434 BJTs technical specifications.

General

Series
BD434
RoHS
Yes
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
40 @ 10mA, 5V
Power Max
36 W
Frequency Transition
3MHz
Transistor Type
PNP

Alternate Parts Comparison (BD434 vs BD140-16 vs BD237 vs BD139-16)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Collector Cutoff Max100µA100nA (ICBO)100µA (ICBO)100nA (ICBO)
Current Collector IC Max4 A1.5 A2 A1.5 A
Dc Current Gain Hfe Min IC Vce40 @ 10mA, 5V100 @ 150mA, 2V25 @ 1A, 2V100 @ 150mA, 2V
Power Max36 W1.25 W25 W1.25 W
Transistor TypePNPPNPNPNNPN
Vce Saturation Max Ib IC500mV @ 200mA, 2A500mV @ 50mA, 500mA600mV @ 100mA, 1A500mV @ 50mA, 500mA
Voltage Collector Emitter Breakdown Max22 V80 V80 V80 V
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