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STMicroelectronics 2SD882 BJTs

NPN BJT Transistor, 30V, 3A, 100MHz, SOT-32

20,940 ActiveSTMicroelectronicsTO-225AA, TO-126-3$0.12
2SD882 TO-225AA, TO-126-3 package illustration

Same model may have multiple batches, images only for reference.

2SD882
Manufacturer
Part Number (MPN)
2SD882
Detailed Description
NPN BJT Transistor, 30V, 3A, 100MHz, SOT-32
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
PDF 2SD882 Datasheet
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Technical Specifications

STMicroelectronics 2SD882 BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 2V
Power Max
12.5 W
Frequency Transition
100MHz
Transistor Type
NPN
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
30 V

Related Parts Comparison (2SD882 vs MJE3055T vs TIP31A vs ST13003)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-65 °C ~ 150 °C
Lifecycle StatusActiveProductionProductionProduction
Package / CaseTO-225AA, TO-126-3TO-220-3TO-220-3--
Current Collector Cutoff Max100µA700µA300µA--
Current Collector IC Max3 A10 A3 A--
Dc Current Gain Hfe Min IC Vce100 @ 100mA, 2V20 @ 4A, 4V10 @ 3A, 4V--
Power Max12.5 W75 W2 W--
Transistor TypeNPNNPNNPN--
Vce Saturation Max Ib IC1.1V @ 150mA, 3A8V @ 3.3A, 10A1.2V @ 375mA, 3A--
Voltage Collector Emitter Breakdown Max30 V60 V60 V--
Number of Pins--333
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