STMicroelectronics BD139-16 BJTs
NPN BJT Transistor, 80V, 1.5A, SOT-32
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD139-16
Base Model
Detailed Description
NPN BJT Transistor, 80V, 1.5A, SOT-32
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
BD139-16 Datasheet
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Technical Specifications
STMicroelectronics BD139-16 BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 2V
Power Max
1.25 W
Transistor Type
NPN
Current Collector IC Max
1.5 A
Related Parts Comparison (BD139-16 vs BD139 vs BD139-10 vs BD912)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 1mA |
| Current Collector IC Max | 1.5 A | 1.5 A | 1.5 A | 15 A |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 2V | 40 @ 150mA, 2V | 63 @ 150mA, 2V | 15 @ 5A, 4V |
| Power Max | 1.25 W | 1.25 W | 1.25 W | 90 W |
| Transistor Type | NPN | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 3V @ 2.5A, 10A |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 80 V | 100 V |
| RoHS | Yes | -- | Yes | Yes |
| Action |
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