STMicroelectronics BD237 BJTs
NPN BJT Transistor, 80V, 2A, 25W, SOT-32, Through Hole
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD237
Detailed Description
NPN BJT Transistor, 80V, 2A, 25W, SOT-32, Through Hole
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
BD237 Datasheet
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Technical Specifications
STMicroelectronics BD237 BJTs technical specifications.
General
Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100µA (ICBO)
Dc Current Gain Hfe Min IC Vce
25 @ 1A, 2V
Power Max
25 W
Transistor Type
NPN
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
80 V
Related Parts Comparison (BD237 vs BD140-16 vs BD139 vs BD139-16)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100µA (ICBO) | 100nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 2 A | 1.5 A | 1.5 A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 25 @ 1A, 2V | 100 @ 150mA, 2V | 40 @ 150mA, 2V | 100 @ 150mA, 2V |
| Power Max | 25 W | 1.25 W | 1.25 W | 1.25 W |
| Transistor Type | NPN | PNP | NPN | NPN |
| Vce Saturation Max Ib IC | 600mV @ 100mA, 1A | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 80 V | 80 V |
| Action |
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