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STMicroelectronics BD139-10 BJTs

NPN BJT Transistor, 80V, 1.5A, SOT-32

2,021 ActiveSTMicroelectronicsBD139TO-225AA, TO-126-3$0.22
BD139-10 - No Image Available

Same model may have multiple batches, images only for reference.

BD139-10
Manufacturer
Part Number (MPN)
BD139-10
Base Model
Detailed Description
NPN BJT Transistor, 80V, 1.5A, SOT-32
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
PDF BD139-10 Datasheet
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Ordering Code Family

BD139 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics BD139-10 BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 80V 1.5A SOT-32
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
63 @ 150mA, 2V
Power Max
1.25 W
Transistor Type
NPN

Alternate Parts Comparison (BD139-10 vs BD139 vs BD139-16 vs BD911)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA (ICBO)100nA (ICBO)100nA (ICBO)1mA
Current Collector IC Max1.5 A1.5 A1.5 A15 A
Dc Current Gain Hfe Min IC Vce63 @ 150mA, 2V40 @ 150mA, 2V100 @ 150mA, 2V15 @ 5A, 4V
DescriptionTRANS NPN 80V 1.5A SOT-32TRANS NPN 80V 1.5A SOT-32-3TRANS NPN 80V 1.5A SOT-32-3TRANS NPN 100V 15A TO-220
Detailed DescriptionBipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32-3Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32-3Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Through Hole TO-220
Power Max1.25 W1.25 W1.25 W90 W
Transistor TypeNPNNPNNPNNPN
Vce Saturation Max Ib IC500mV @ 50mA, 500mA500mV @ 50mA, 500mA500mV @ 50mA, 500mA3V @ 2.5A, 10A
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