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STMicroelectronics MJE350 BJTs

PNP BJT Transistor, 300V, 500mA, SOT-32

3,834 ActiveSTMicroelectronicsTO-225AA, TO-126-3$0.30
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Same model may have multiple batches, images only for reference.

MJE350
Manufacturer
Part Number (MPN)
MJE350
Detailed Description
PNP BJT Transistor, 300V, 500mA, SOT-32
Package
TO-225AA, TO-126-3
Lifecycle Status
Active
Datasheet
PDF MJE350 Datasheet
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Technical Specifications

STMicroelectronics MJE350 BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 300V 0.5A SOT-32-3
Detailed Description
Bipolar (BJT) Transistor PNP 300 V 500 mA 20.8 W Through Hole SOT-32-3
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
20.8 W
Transistor Type
PNP
Current Collector IC Max
500 mA

Alternate Parts Comparison (MJE350 vs MJE3055T vs TIP31A vs ST13003)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-65 °C ~ 150 °C
Number of Pins--333
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--Non-CompliantNon-CompliantNon-Compliant
Collector Base Voltage Vcbo--70 V60 V700 V
Collector Emitter Breakdown Voltage--60 V60 V400 V
Collector Emitter Saturation Voltage--8 V1.2 V3 V
Collector Emitter Voltage Vceo--60 V60 V400 V
Current Rating--10 A3 A1.5 A
Element Configuration--SingleSingleSingle
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