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STMicroelectronics BD238 BJTs

PNP BJT Transistor, 80V, 2A, 25W, TO-126

200STMicroelectronicsTO-225AA, TO-126-3$0.11
BD238 - No Image Available

Same model may have multiple batches, images only for reference.

BD238
Manufacturer
Part Number (MPN)
BD238
Detailed Description
PNP BJT Transistor, 80V, 2A, 25W, TO-126
Package
TO-225AA, TO-126-3
Lifecycle Status
Obsolete
Datasheet
PDF BD238 Datasheet
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Technical Specifications

STMicroelectronics BD238 BJTs technical specifications.

General

Package / Case
TO-225AA, TO-126-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
100µA (ICBO)
Dc Current Gain Hfe Min IC Vce
25 @ 1A, 2V
Power Max
25 W
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
80 V

Alternate Parts Comparison (BD238 vs BD140-16 vs BD139 vs BD237)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3TO-225AA, TO-126-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Collector Cutoff Max100µA (ICBO)100nA (ICBO)100nA (ICBO)100µA (ICBO)
Current Collector IC Max2 A1.5 A1.5 A2 A
Dc Current Gain Hfe Min IC Vce25 @ 1A, 2V100 @ 150mA, 2V40 @ 150mA, 2V25 @ 1A, 2V
Description--------
Detailed Description--------
Power Max25 W1.25 W1.25 W25 W
Transistor TypePNPPNPNPNNPN
Vce Saturation Max Ib IC600mV @ 100mA, 1A500mV @ 50mA, 500mA500mV @ 50mA, 500mA600mV @ 100mA, 1A
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