STMicroelectronics BD912 BJTs
PNP BJT Transistor, 100V, 15A, 90W, TO-220
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BD912
Detailed Description
PNP BJT Transistor, 100V, 15A, 90W, TO-220
Package
TO-220-3
Lifecycle Status
Active
Datasheet
BD912 Datasheet
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Technical Specifications
STMicroelectronics BD912 BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 100V 15A TO-220
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 15 A 3MHz 90 W Through Hole TO-220
Dc Current Gain Hfe Min IC Vce
15 @ 5A, 4V
Power Max
90 W
Frequency Transition
3MHz
Transistor Type
PNP
Alternate Parts Comparison (BD912 vs STGP20M65DF2 vs STGP19NC60HD vs STGP19NC60KD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 15 A | 40 A | 40 A | 35 A |
| Description | TRANS PNP 100V 15A TO-220 | IGBT TRENCH FS 650V 40A TO-220 | IGBT 600V 40A TO-220 | IGBT 600V 35A TO-220 |
| Detailed Description | Bipolar (BJT) Transistor PNP 100 V 15 A 3MHz 90 W Through Hole TO-220 | IGBT Trench Field Stop 650 V 40 A 166 W Through Hole TO-220 | IGBT 600 V 40 A 130 W Through Hole TO-220 | IGBT 600 V 35 A 125 W Through Hole TO-220 |
| Power Max | 90 W | 166 W | 130 W | 125 W |
| Voltage Collector Emitter Breakdown Max | 100 V | 650 V | 600 V | 600 V |
| Series | -- | M | PowerMESH™ | PowerMESH™ |
| Current Collector Pulsed Icm | -- | 80 A | 60 A | 75 A |
| Gate Charge | -- | 63 nC | 53 nC | 55 nC |
| Action |
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