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STMicroelectronics BD911 BJTs

NPN BJT 100V 15A 90W TO-220 Power Transistor

2,341 ActiveSTMicroelectronicsTO-220-3$1.43
BD911 - No Image Available

Same model may have multiple batches, images only for reference.

BD911
Manufacturer
Part Number (MPN)
BD911
Detailed Description
NPN BJT 100V 15A 90W TO-220 Power Transistor
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF BD911 Datasheet
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Technical Specifications

STMicroelectronics BD911 BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 100V 15A TO-220
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Through Hole TO-220
Dc Current Gain Hfe Min IC Vce
15 @ 5A, 4V
Power Max
90 W
Frequency Transition
3MHz
Transistor Type
NPN

Alternate Parts Comparison (BD911 vs STGP20M65DF2 vs STGP19NC60HD vs STGP19NC60KD)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max15 A40 A40 A35 A
DescriptionTRANS NPN 100V 15A TO-220IGBT TRENCH FS 650V 40A TO-220IGBT 600V 40A TO-220IGBT 600V 35A TO-220
Detailed DescriptionBipolar (BJT) Transistor NPN 100 V 15 A 3MHz 90 W Through Hole TO-220IGBT Trench Field Stop 650 V 40 A 166 W Through Hole TO-220IGBT 600 V 40 A 130 W Through Hole TO-220IGBT 600 V 35 A 125 W Through Hole TO-220
Power Max90 W166 W130 W125 W
Voltage Collector Emitter Breakdown Max100 V650 V600 V600 V
Series--MPowerMESH™PowerMESH™
Current Collector Pulsed Icm--80 A60 A75 A
Gate Charge--63 nC53 nC55 nC
Action

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