Samsung Semiconductor K4X1G323PD-8GC3 DRAM
DRAM Memory IC 1Gb 1.8V FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4X1G323PD-8GC3
Detailed Description
DRAM Chip Mobile SDRAM 1G-Bit 32Mx32 1.8V 90-Pin F-BGA
Package
FBGA
Key Features
Package / Case: FBGA; Supply Voltage: 1.8V
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4X1G323PD-8GC3 Datasheet
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Technical Specifications
Samsung Semiconductor K4X1G323PD-8GC3 DRAM technical specifications.
General
RoHS
Compliant
Package / Case
FBGA
Supply Voltage
1.8V
Density
1Gb
Alternate Parts Comparison (K4X1G323PD-8GC3 vs K4AAG165WA-BCTD vs K4J10324KE-HC12 vs K4A4G085WE-BCRC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Compliant | -- | Compliant |
| Package / Case | FBGA | -- | FBGA | -- |
| Supply Voltage | 1.8V | -- | -- | 1.2 |
| Density | 1Gb | -- | 1G | -- |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -- | 0 ~ 85 | 0 ~ 85 | 0 ~ 95 |
| Number of Pins | -- | 96 | 136 | 78 |
| Automotive | -- | No | No | No |
| Number of Internal Banks | -- | 16 | 8 | 16 |
| Number of Words Per Bank | -- | 64M | 4M | 32M |
| Organization | -- | 1Gx16 | 32Mx32 | 512Mx8 |
| PPAP | -- | No | No | No |
| Action |
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