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Samsung Semiconductor K4T56163QN-HCE6 DRAM

DDR2 SDRAM 256Mbit 16Mx16 667MHz 1.8V 84-Pin FBGA

4,390 ActiveSamsung SemiconductorFBGA$10.10RoHS
K4T56163QN-HCE6 - No Image Available

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K4T56163QN-HCE6
Manufacturer
Samsung Semiconductor
Part Number (MPN)
K4T56163QN-HCE6
Category
Integrated Circuits (ICs)Memory ICsDRAM
Detailed Description
DDR2 SDRAM 256Mbit 16Mx16 667MHz 1.8V 84-Pin FBGA
Package
FBGA
Key Features
Package / Case: FBGA; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4T56163QN-HCE6 Datasheet
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Technical Specifications

Samsung Semiconductor K4T56163QN-HCE6 DRAM technical specifications.

General

Data Bus Width
16
RoHS
Yes
Number of Pins
84
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0 ~ 95
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball

Alternate Parts Comparison (K4T56163QN-HCE6 vs K4T1G164QF-BCE6 vs K4T1G084QF-BCE6 vs K4B1G1646G-BCK0)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Samsung SemiconductorK4T56163QN-HCE6
Samsung SemiconductorK4T1G164QF-BCE6
Samsung SemiconductorK4T1G084QF-BCE6
Samsung SemiconductorK4B1G1646G-BCK0
Package / CaseFBGAFBGAFBGAFBGA
Operating Temperature0 ~ 950°C ~ 95°C0°C ~ 95°C0°C ~ 95°C
RoHSYesYesYesYes
Density256M1Gb1Gb1Gb
Address Bus Width15--17b16b
Supply Voltage--1.8V1.8V1.5V
Access Time--0.45ns0.45ns225ps
Max Frequency--667MHz667MHz1.6GHz
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K4H560838H-UCCCK4H560838H-UCCCSamsung Semiconductor
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K4AAG165WA-BCTDK4AAG165WA-BCTDSamsung Semiconductor
Package: BGA | Mounting Type: Surface Mount | Memory Size: 16G | Interface: POD | Number of Pins: 96 | Organization: 1Gx16
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K4T1G164QF-BCE6K4T1G164QF-BCE6Samsung Semiconductor
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