Samsung Semiconductor K4T1G164QF-BCE6 DRAM
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G164QF-BCE6
Detailed Description
Package
FBGA
Key Features
Package / Case: FBGA; Supply Voltage: 1.8V
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
K4T1G164QF-BCE6 Datasheet
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Technical Specifications
Samsung Semiconductor K4T1G164QF-BCE6 DRAM technical specifications.
General
Access Time
0.45ns
Access Time Max
0.45ns
Package / Case
FBGA
Density
1Gb
Max Frequency
667MHz
Max Operating Temp
95°C
Min Operating Temp
0°C
Supply Voltage
1.8V
RoHS
Yes
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