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Samsung Semiconductor K4B2G0846D-HYK0 DRAM

DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78

8,000 ActiveSamsung SemiconductorFBGA$3.25RoHS
K4B2G0846D-HYK0 - No Image Available

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K4B2G0846D-HYK0
Manufacturer
Samsung Semiconductor
Part Number (MPN)
K4B2G0846D-HYK0
Category
Integrated Circuits (ICs)Memory ICsDRAM
Detailed Description
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78
Package
FBGA
Key Features
Package / Case: FBGA; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4B2G0846D-HYK0 Datasheet
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Technical Specifications

Samsung Semiconductor K4B2G0846D-HYK0 DRAM technical specifications.

General

RoHS
Yes
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C
Access Time
225ps
Address Bus Width
18b
Density
2Gb
Max Frequency
1.6GHz
Nominal Supply Current
90mA

Alternate Parts Comparison (K4B2G0846D-HYK0 vs K4AAG165WA-BCTD vs K4H560838H-UCCC vs K4T1G164QF-BCE6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Samsung SemiconductorK4B2G0846D-HYK0
Samsung SemiconductorK4AAG165WA-BCTD
Samsung SemiconductorK4H560838H-UCCC
Samsung SemiconductorK4T1G164QF-BCE6
Operating Temperature0°C ~ 95°C0 ~ 850°C ~ 70°C0°C ~ 95°C
RoHSYesCompliantYesYes
Package / CaseFBGA--FBGAFBGA
Density2Gb--256Mb1Gb
Max Frequency1.6GHz--400MHz667MHz
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K4AAG165WA-BCTDK4AAG165WA-BCTDSamsung Semiconductor
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K4T1G164QF-BCE6K4T1G164QF-BCE6Samsung Semiconductor
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