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Samsung Semiconductor K4J10324KE-HC12 DRAM

GDDR3 SDRAM 1Gbit 32Mx32 1.8V 136-Pin FBGA

6,000 ActiveSamsung SemiconductorFBGA$2.61
K4J10324KE-HC12 - No Image Available

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K4J10324KE-HC12
Manufacturer
Samsung Semiconductor
Part Number (MPN)
K4J10324KE-HC12
Category
Integrated Circuits (ICs)Memory ICsDRAM
Detailed Description
GDDR3 SDRAM 1Gbit 32Mx32 1.8V 136-Pin FBGA
Package
FBGA
Key Features
Package / Case: FBGA; Mounting Type: Surface Mount
Lifecycle Status
Active
Datasheet
PDF K4J10324KE-HC12 Datasheet
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Technical Specifications

Samsung Semiconductor K4J10324KE-HC12 DRAM technical specifications.

General

Data Bus Width
32
Number of Pins
136
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0 ~ 85
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pcb
136

Alternate Parts Comparison (K4J10324KE-HC12 vs K4T1G164QF-BCE6 vs K4T1G084QF-BCE6 vs K4B1G1646G-BCK0)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Samsung SemiconductorK4J10324KE-HC12
Samsung SemiconductorK4T1G164QF-BCE6
Samsung SemiconductorK4T1G084QF-BCE6
Samsung SemiconductorK4B1G1646G-BCK0
Package / CaseFBGAFBGAFBGAFBGA
Operating Temperature0 ~ 850°C ~ 95°C0°C ~ 95°C0°C ~ 95°C
Density1G1Gb1Gb1Gb
Address Bus Width15--17b16b
Supply Voltage--1.8V1.8V1.5V
Access Time--0.45ns0.45ns225ps
Max Frequency--667MHz667MHz1.6GHz
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K4H560838H-UCCCK4H560838H-UCCCSamsung Semiconductor
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K4T1G164QF-BCE6K4T1G164QF-BCE6Samsung Semiconductor
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