Samsung Semiconductor K4J10324KE-HC12 DRAM
GDDR3 SDRAM 1Gbit 32Mx32 1.8V 136-Pin FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4J10324KE-HC12
Detailed Description
Package
FBGA
Key Features
Package / Case: FBGA; Mounting Type: Surface Mount
Lifecycle Status
Unknown
RoHS State
Unknown
Datasheet
K4J10324KE-HC12 Datasheet
Quick Jump:
Technical Specifications
Samsung Semiconductor K4J10324KE-HC12 DRAM technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package / Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Number of Pins
136
Pcb
136
Package Length Mm
14
Package Width Mm
10
Seated Plane Height Mm
1.12
More in This Category
Browse related parts from the same category — sorted by series, manufacturer, and package similarity. These are not verified pin-to-pin substitutes.
K4H560838H-UCCCSamsung SemiconductorPackage / Case: FBGA | Supply Voltage: 2.6V | Access Time Max: 0.55ns | Address Bus Width: 15b | Data Bus Width: 8b | Density: 256Mb
K4T1G084QF-BCE6Samsung SemiconductorPackage / Case: FBGA | Supply Voltage: 1.8V | Access Time: 0.45ns | Address Bus Width: 17b | Density: 1Gb | Max Frequency: 667MHz
K4AAG165WA-BCTDSamsung SemiconductorPackage: BGA | Mounting Type: Surface Mount | Memory Size: 16G | Interface: POD | Number of Pins: 96 | Organization: 1Gx16
K4T1G164QF-BCE6Samsung SemiconductorPackage / Case: FBGA | Supply Voltage: 1.8V | Access Time: 0.45ns | Access Time Max: 0.45ns | Density: 1Gb | Max Frequency: 667MHz