Samsung Semiconductor K4B1G1646G-BCK0 DRAM
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G1646G-BCK0
Detailed Description
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4B1G1646G-BCK0 Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G1646G-BCK0 DRAM technical specifications.
General
RoHS
Yes
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.5V
Access Time
225ps
Address Bus Width
16b
Density
1Gb
Max Frequency
1.6GHz
Nominal Supply Current
135mA
Alternate Parts Comparison (K4B1G1646G-BCK0 vs K4AAG165WA-BCTD vs K4H560838H-UCCC vs K4T1G164QF-BCE6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | 0°C ~ 95°C | 0 ~ 85 | 0°C ~ 70°C | 0°C ~ 95°C |
| RoHS | Yes | Compliant | Yes | Yes |
| Package / Case | FBGA | -- | FBGA | FBGA |
| Supply Voltage | 1.5V | -- | 2.6V | 1.8V |
| Density | 1Gb | -- | 256Mb | 1Gb |
| Max Frequency | 1.6GHz | -- | 400MHz | 667MHz |
| Action |
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