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Samsung Semiconductor K4B1G1646G-BCK0 DRAM

DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96

8,190 ActiveSamsung SemiconductorFBGA$5.48RoHS
K4B1G1646G-BCK0 - No Image Available

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K4B1G1646G-BCK0
Part Number (MPN)
K4B1G1646G-BCK0
Detailed Description
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4B1G1646G-BCK0 Datasheet
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Technical Specifications

Samsung Semiconductor K4B1G1646G-BCK0 DRAM technical specifications.

General

RoHS
Yes
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.5V
Access Time
225ps
Address Bus Width
16b
Density
1Gb
Max Frequency
1.6GHz
Nominal Supply Current
135mA

Alternate Parts Comparison (K4B1G1646G-BCK0 vs K4AAG165WA-BCTD vs K4H560838H-UCCC vs K4T1G164QF-BCE6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature0°C ~ 95°C0 ~ 850°C ~ 70°C0°C ~ 95°C
RoHSYesCompliantYesYes
Package / CaseFBGA--FBGAFBGA
Supply Voltage1.5V--2.6V1.8V
Density1Gb--256Mb1Gb
Max Frequency1.6GHz--400MHz667MHz
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