Samsung Semiconductor K4T1G084QF-BCE6 DRAM
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G084QF-BCE6
Detailed Description
Package
FBGA
Key Features
Package / Case: FBGA; Supply Voltage: 1.8V
Lifecycle Status
Unknown
RoHS State
Yes
Datasheet
K4T1G084QF-BCE6 Datasheet
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Technical Specifications
Samsung Semiconductor K4T1G084QF-BCE6 DRAM technical specifications.
General
Access Time
0.45ns
Inventory Source
Winsource
Inventory Source File
/Volumes/T7 Shield/电子元器件数据/抓取的数据/Win-Source数据/winsource_未曾下架数据_202605_1.xlsx
Inventory As of
2026-05-15
Source Manufacturer
Samsung
Source Category
Integrated Circuits (ICs) > Memory > SDRAM
Stock
29700
Extracted Price
4.3532
Price Formula
winsource min price * 2
Address Bus Width
17b
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