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Samsung Semiconductor K4M51163PE-BG75 DRAM

Mobile-sdram 2M X 16 Bit X 4 Banks Mobile Sdram in 54FBGA

6,000 ActiveSamsung SemiconductorFBGA$3.25RoHS
K4M51163PE-BG75 - No Image Available

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K4M51163PE-BG75
Manufacturer
Samsung Semiconductor
Part Number (MPN)
K4M51163PE-BG75
Category
Integrated Circuits (ICs)Memory ICsDRAM
Detailed Description
Mobile-sdram 2M X 16 Bit X 4 Banks Mobile Sdram in 54FBGA
Package
FBGA
Key Features
Package / Case: FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4M51163PE-BG75 Datasheet
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Technical Specifications

Samsung Semiconductor K4M51163PE-BG75 DRAM technical specifications.

General

RoHS
Compliant
Package / Case
FBGA
Lead Free
Lead Free

Alternate Parts Comparison (K4M51163PE-BG75 vs K4AAG165WA-BCTD vs K4T1G164QQ-HCE6000 vs K4B1G1646G-BCK0)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Samsung SemiconductorK4M51163PE-BG75
Samsung SemiconductorK4AAG165WA-BCTD
Samsung SemiconductorK4T1G164QQ-HCE6000
Samsung SemiconductorK4B1G1646G-BCK0
RoHSCompliantCompliantCompliantYes
Package / CaseFBGA--FBGAFBGA
Lead FreeLead Free------
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature--0 ~ 850°C ~ 95°C0°C ~ 95°C
Supply Voltage----1.8V1.5V
Address Bus Width----16b16b
Density----1Gb1Gb
Max Frequency----667MHz1.6GHz
Organization--1Gx1664MX16--
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