Samsung Semiconductor K4M56323PI-HG75 DRAM
MOBILE-SDRAM 2M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4M56323PI-HG75
Detailed Description
MOBILE-SDRAM 2M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4M56323PI-HG75 Datasheet
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Technical Specifications
Samsung Semiconductor K4M56323PI-HG75 DRAM technical specifications.
General
RoHS
Compliant
Package / Case
FBGA
Mounting Type
Surface Mount
Supply Voltage
1.8V
Density
256Mb
Organization
8MX32
Alternate Parts Comparison (K4M56323PI-HG75 vs K4AAG165WA-BCTD vs K4H560838H-UCCC vs K4T1G084QF-BCE6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Compliant | Yes | Yes |
| Package / Case | FBGA | -- | FBGA | FBGA |
| Supply Voltage | 1.8V | -- | 2.6V | 1.8V |
| Density | 256Mb | -- | 256Mb | 1Gb |
| Operating Temperature | -- | 0 ~ 85 | 0°C ~ 70°C | 0°C ~ 95°C |
| Action |
More Parts in DRAM
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
K4H560838H-UCCCSamsung SemiconductorPackage / Case: FBGA | Supply Voltage: 2.6V | Access Time Max: 0.55ns | Address Bus Width: 15b | Data Bus Width: 8b | Density: 256Mb
K4T1G084QF-BCE6Samsung SemiconductorPackage / Case: FBGA | Supply Voltage: 1.8V | Access Time: 0.45ns | Address Bus Width: 17b | Density: 1Gb | Max Frequency: 667MHz
K4AAG165WA-BCTDSamsung SemiconductorPackage: BGA | Mounting Type: Surface Mount | Memory Size: 16G | Interface: POD | Number of Pins: 96 | Organization: 1Gx16
K4T1G164QF-BCE6Samsung SemiconductorPackage / Case: FBGA | Supply Voltage: 1.8V | Access Time: 0.45ns | Access Time Max: 0.45ns | Density: 1Gb | Max Frequency: 667MHz