Samsung Semiconductor K4T51163QQ-BCE7 DRAM
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QQ-BCE7
Detailed Description
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V
Package
FBGA
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
K4T51163QQ-BCE7 Datasheet
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Technical Specifications
Samsung Semiconductor K4T51163QQ-BCE7 DRAM technical specifications.
General
Estimated Eol Date
Obsolete
Family
Memory
Family Name
K4T51163QQ
Introduction Date
February 25, 2014
Alternate Parts Comparison (K4T51163QQ-BCE7 vs K4B2G0846D-HCH9 vs K4M561633G-BN75 vs K4B2G1646Q-BCMA)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Estimated Eol Date | Obsolete | -- | -- | Obsolete |
| Family | Memory | -- | -- | Memory |
| Family Name | K4T51163QQ | -- | -- | K4B2G1646Q |
| Introduction Date | February 25, 2014 | -- | -- | October 08, 1996 |
| Operating Temperature | -- | 0 ~ 95 | -25 ~ 85 | -- |
| Number of Pins | -- | 78 | 54 | -- |
| Action |
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