Samsung Semiconductor K4T51163QJ-BCE7 DRAM
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QJ-BCE7
Detailed Description
Package
FBGA
Key Features
Package / Case: FBGA; Mounting Type: Surface Mount; Supply Voltage: 1.8V
Lifecycle Status
Unknown
RoHS State
Compliant
Datasheet
K4T51163QJ-BCE7 Datasheet
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Technical Specifications
Samsung Semiconductor K4T51163QJ-BCE7 DRAM technical specifications.
General
Access Time Max
0.4ns
Address Bus Width
15b
Package / Case
FBGA
Density
536870912b
Lead Free
Lead Free
Max Frequency
800MHz
Max Operating Temp
95°C
Min Operating Temp
0°C
Max Supply Voltage
1.9V
Min Supply Voltage
1.7V
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