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Samsung Semiconductor K4T51163QJ-BCE7 DRAM

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA

159 ActiveSamsung SemiconductorFBGA$7.76RoHS
K4T51163QJ-BCE7 - No Image Available

Same model may have multiple batches, images only for reference.

K4T51163QJ-BCE7
Manufacturer
Samsung Semiconductor
Part Number (MPN)
K4T51163QJ-BCE7
Category
Integrated Circuits (ICs)Memory ICsDRAM
Detailed Description
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4T51163QJ-BCE7 Datasheet
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Technical Specifications

Samsung Semiconductor K4T51163QJ-BCE7 DRAM technical specifications.

General

RoHS
Compliant
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.8V
Access Time Max
0.4ns
Address Bus Width
15b
Density
536870912b
Lead Free
Lead Free
Max Frequency
800MHz

Alternate Parts Comparison (K4T51163QJ-BCE7 vs K4AAG165WA-BCTD vs K4T1G084QF-BCE6 vs K4T1G164QF-BCE6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Samsung SemiconductorK4T51163QJ-BCE7
Samsung SemiconductorK4AAG165WA-BCTD
Samsung SemiconductorK4T1G084QF-BCE6
Samsung SemiconductorK4T1G164QF-BCE6
Operating Temperature0°C ~ 95°C0 ~ 850°C ~ 95°C0°C ~ 95°C
RoHSCompliantCompliantYesYes
Package / CaseFBGA--FBGAFBGA
Supply Voltage1.8V--1.8V1.8V
Density536870912b--1Gb1Gb
Max Frequency800MHz--667MHz667MHz
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