Samsung Semiconductor K4T51163QI-HIE7 DRAM
DRAM Memory IC 512M FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QI-HIE7
Detailed Description
DDR2 SDRAM 512Mbit 32Mx16 800MHz 1.8V 84-Pin FBGA
Package
FBGA
Key Features
Package / Case: FBGA; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T51163QI-HIE7 Datasheet
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Technical Specifications
Samsung Semiconductor K4T51163QI-HIE7 DRAM technical specifications.
General
Data Bus Width
16
RoHS
Yes
Number of Pins
84
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
-40 ~ 95
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Alternate Parts Comparison (K4T51163QI-HIE7 vs K4M51163PE-BG75 vs K4T1G164QF-BCE6 vs K4T1G084QF-BCE6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | FBGA | FBGA | FBGA | FBGA |
| RoHS | Yes | Compliant | Yes | Yes |
| Operating Temperature | -40 ~ 95 | -- | 0°C ~ 95°C | 0°C ~ 95°C |
| Density | 512M | -- | 1Gb | 1Gb |
| Address Bus Width | 15 | -- | -- | 17b |
| Mounting Type | Surface Mount | -- | -- | -- |
| Data Bus Width | 16 | -- | -- | -- |
| Number of Pins | 84 | -- | -- | -- |
| AEC Qualified | No | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Basic Package Type | Ball Grid Array | -- | -- | -- |
| Cage Code | 1542F | -- | -- | -- |
| Action |
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K4T51163QQ-BCE7Samsung SemiconductorDRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V [FBGA | Obsolete/discontinued; stocked for maintenance and LTB | RoHS Compli…