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Samsung Semiconductor K4S561632E-UI75 DRAM

DRAM Chip DDR2 SDRAM 1G-Bit 1.8V 60-Pin FBGA

1,158 ActiveSamsung SemiconductorFBGA$4.35RoHS
K4S561632E-UI75 - No Image Available

Same model may have multiple batches, images only for reference.

K4S561632E-UI75
Part Number (MPN)
K4S561632E-UI75
Detailed Description
DRAM Chip DDR2 SDRAM 1G-Bit 1.8V 60-Pin FBGA
Package
FBGA
Key Features
Package / Case: FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4S561632E-UI75 Datasheet
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Technical Specifications

Samsung Semiconductor K4S561632E-UI75 DRAM technical specifications.

General

RoHS
Compliant
Package / Case
FBGA
Access Time
7.5ns
Frequency
133MHz
Lead Free
Lead Free

Alternate Parts Comparison (K4S561632E-UI75 vs K4J10324KE-HC12 vs K4A4G085WE-BCRC vs K4AAG165WA-BCWE)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSCompliant--CompliantCompliant
Package / CaseFBGAFBGA----
Frequency133MHz------
Access Time7.5ns------
Lead FreeLead Free------
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature--0 ~ 850 ~ 950 ~ 85
Number of Pins--1367896
Automotive--NoNoNo
Number of Internal Banks--81616
Number of Words Per Bank--4M32M64M
Organization--32Mx32512Mx81Gx16
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