Samsung Semiconductor K4B2G1646Q-BMK0000 DRAM
DRAM Memory IC 2G 1.35V
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B2G1646Q-BMK0000
Detailed Description
DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin FBGA
Package
FBGA
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
K4B2G1646Q-BMK0000 Datasheet
Quick Jump:
Technical Specifications
Samsung Semiconductor K4B2G1646Q-BMK0000 DRAM technical specifications.
General
Memory Size
2G
RoHS
Compliant
Number of Pins
96
Mounting Type
Surface Mount
Operating Temperature
-40 ~ 95
Supply Voltage
1.35
Lifecycle Status
Obsolete
Organization
128Mx16
Ppap
No
Data Bus Width Bit
16
Alternate Parts Comparison (K4B2G1646Q-BMK0000 vs K4H560838H-UCCC vs K4B2G0846D-HYK0 vs K4T1G084QF-BCE6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -40 ~ 95 | 0°C ~ 70°C | 0°C ~ 95°C | 0°C ~ 95°C |
| RoHS | Compliant | Yes | Yes | Yes |
| Supply Voltage | 1.35 | 2.6V | -- | 1.8V |
| Package / Case | -- | FBGA | FBGA | FBGA |
| Address Bus Width | -- | 15b | 18b | 17b |
| Density | -- | 256Mb | 2Gb | 1Gb |
| Max Frequency | -- | 400MHz | 1.6GHz | 667MHz |
| Action |
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