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Samsung Semiconductor K4A4G165WE-BIRC DRAM

DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA

63Samsung SemiconductorFBGA$23.28RoHS
K4A4G165WE-BIRC - No Image Available

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K4A4G165WE-BIRC
Manufacturer
Samsung Semiconductor
Part Number (MPN)
K4A4G165WE-BIRC
Category
Integrated Circuits (ICs)Memory ICsDRAM
Detailed Description
DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA
Package
FBGA
Lifecycle Status
Last Time Buy
RoHS State
RoHS Compliant
Datasheet
PDF K4A4G165WE-BIRC Datasheet
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Technical Specifications

Samsung Semiconductor K4A4G165WE-BIRC DRAM technical specifications.

General

Interface
POD
Memory Size
4G
RoHS
Compliant
Number of Pins
96
Mounting Type
Surface Mount
Operating Temperature
-40 ~ 95
Supply Voltage
1.2
Lifecycle Status
LTB
Organization
256Mx16
Ppap
No

Alternate Parts Comparison (K4A4G165WE-BIRC vs K4H560838H-UCCC vs K4T1G084QF-BCE6 vs K4T1G164QF-BCE6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Samsung SemiconductorK4A4G165WE-BIRC
Samsung SemiconductorK4H560838H-UCCC
Samsung SemiconductorK4T1G084QF-BCE6
Samsung SemiconductorK4T1G164QF-BCE6
Operating Temperature-40 ~ 950°C ~ 70°C0°C ~ 95°C0°C ~ 95°C
Supply Voltage1.22.6V1.8V1.8V
RoHSCompliantYesYesYes
Package / Case--FBGAFBGAFBGA
Density--256Mb1Gb1Gb
Max Frequency--400MHz667MHz667MHz
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K4H560838H-UCCCK4H560838H-UCCCSamsung Semiconductor
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K4AAG165WA-BCTDK4AAG165WA-BCTDSamsung Semiconductor
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K4T1G164QF-BCE6K4T1G164QF-BCE6Samsung Semiconductor
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