ROHM RS6P100BHTB1 MOSFETs
NCH 100V 100A, HSOP8, POWER MOSF
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RS6P100BHTB1
Detailed Description
NCH 100V 100A, HSOP8, POWER MOSF
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
RS6P100BHTB1 Datasheet
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Technical Specifications
ROHM RS6P100BHTB1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
5.9 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RS6P100BHTB1 vs RS1G180MNTB vs RS1E240GNTB vs RS3E095BNGZETB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 100 A | 18 A | 24 A | 9.5 A |
| Package | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 | 8-SOP |
| Part Aliases | RS6P100BH | RS1G180MN | RS1E240GN | RS3E095BN |
| Pd Power Dissipation | 104 W | 30 W | 3 W | 2 W |
| Qg Gate Charge | 49 nC | 19.5 nC | 23 nC | 16.3 nC |
| Rds on Drain Source Resistance | 5.9 mOhms | 7 mOhms | 3.3 mOhms | 11.9 mOhms |
| Technology | Si | Si | Si | Si |
| Action |
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