ROHM RS1E321GNTB1 MOSFETs
MOSFET N-CH 30V 32A/80A 8HSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RS1E321GNTB1
Detailed Description
MOSFET N-CH 30V 32A/80A 8HSOP
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
RS1E321GNTB1 Datasheet
Quick Jump:
Technical Specifications
ROHM RS1E321GNTB1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
80 A
Rds on Drain Source Resistance
2.1 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RS1E321GNTB1 vs RS1G180MNTB vs RS6P100BHTB1 vs RS1E240GNTB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 80 A | 18 A | 100 A | 24 A |
| Package | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 |
| Part Aliases | RS1E321GN | RS1G180MN | RS6P100BH | RS1E240GN |
| Pd Power Dissipation | 34 W | 30 W | 104 W | 3 W |
| Qg Gate Charge | 42.8 nC | 19.5 nC | 49 nC | 23 nC |
| Rds on Drain Source Resistance | 2.1 mOhms | 7 mOhms | 5.9 mOhms | 3.3 mOhms |
| Technology | Si | Si | Si | Si |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
