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ROHM RS1G180MNTB MOSFETs

MOSFET N-CH 40V 18A/80A 8HSOP

2,500 ActiveROHMPowerTDFN-8$0.60
RS1G180MNTB PowerTDFN-8 package illustration

Same model may have multiple batches, images only for reference.

RS1G180MNTB
Manufacturer
Part Number (MPN)
RS1G180MNTB
Detailed Description
MOSFET N-CH 40V 18A/80A 8HSOP
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
PDF RS1G180MNTB Datasheet
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Technical Specifications

ROHM RS1G180MNTB MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
18 A
Rds on Drain Source Resistance
7 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (RS1G180MNTB vs RS6P100BHTB1 vs RS1E240GNTB vs RS3E095BNGZETB)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C
Number of Channels1 Channel1 Channel1 Channel1 Channel
RoHSYesYesYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ID Continuous Drain Current18 A100 A24 A9.5 A
PackagePowerTDFN-8PowerTDFN-8PowerTDFN-88-SOP
Part AliasesRS1G180MNRS6P100BHRS1E240GNRS3E095BN
Pd Power Dissipation30 W104 W3 W2 W
Qg Gate Charge19.5 nC49 nC23 nC16.3 nC
Rds on Drain Source Resistance7 mOhms5.9 mOhms3.3 mOhms11.9 mOhms
TechnologySiSiSiSi
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