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ROHM HP8K24TB MOSFETs

MOSFET 2N-CH 30V 15A/27A 8HSOP

99,999 ActiveROHMPowerTDFN-8$3.66
HP8K24TB PowerTDFN-8 package illustration

Same model may have multiple batches, images only for reference.

HP8K24TB
Manufacturer
Part Number (MPN)
HP8K24TB
Detailed Description
MOSFET 2N-CH 30V 15A/27A 8HSOP
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
PDF HP8K24TB Datasheet
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Technical Specifications

ROHM HP8K24TB MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
27 A, 80 A
Rds on Drain Source Resistance
8.8 mOhms, 3 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (HP8K24TB vs HP8MA2TB1 vs HP8K22TB vs RUM002N02T2L)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSurface Mount
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C-55 °C ~ 150 °C
Number of Channels2 Channel2 Channel2 Channel1 Channel
RoHSYesYesYesCompliant
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationDualDualDualSingle
Fall Time3.4 ns, 19 ns14 ns, 60 ns3.4 ns, 8.4 ns10 ns
PackagePowerTDFN-8PowerTDFN-8HSOP-8SOT-23
Pd Power Dissipation22 W, 31 W7 W3 W150 mW
Rds on Drain Source Resistance8.8 mOhms, 3 mOhms9.6 mOhms, 17.9 mOhms6.7 mOhms, 3.6 mOhms1.2 Ohms
Rise Time4.5 ns, 12 ns12 ns, 14 ns4.5 ns, 7.2 ns10 ns
TechnologySiSiSiSi
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