ROHM HP8MA2TB1 MOSFETs
MOSFET N/P-CH 30V 18A/15A 8HSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HP8MA2TB1
Detailed Description
MOSFET N/P-CH 30V 18A/15A 8HSOP
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
HP8MA2TB1 Datasheet
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Technical Specifications
ROHM HP8MA2TB1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
18 A, 15 A
Rds on Drain Source Resistance
9.6 mOhms, 17.9 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (HP8MA2TB1 vs HP8K24TB vs HP8K22TB vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -55 °C ~ 150 °C |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Dual | Single |
| Fall Time | 14 ns, 60 ns | 3.4 ns, 19 ns | 3.4 ns, 8.4 ns | 10 ns |
| Package | PowerTDFN-8 | PowerTDFN-8 | HSOP-8 | SOT-23 |
| Pd Power Dissipation | 7 W | 22 W, 31 W | 3 W | 150 mW |
| Rds on Drain Source Resistance | 9.6 mOhms, 17.9 mOhms | 8.8 mOhms, 3 mOhms | 6.7 mOhms, 3.6 mOhms | 1.2 Ohms |
| Rise Time | 12 ns, 14 ns | 4.5 ns, 12 ns | 4.5 ns, 7.2 ns | 10 ns |
| Technology | Si | Si | Si | Si |
| Action |
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